Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSS
Gate to Source Leakage Current
ID =250µA, VGS = 0V
ID = -250µA, VGS = 0V
ID = 250µA, referenced to 25°C
ID = -250µA, referenced to 25°C
VDS = 64V, VGS = 0V
VDS = -64V, VGS = 0V
VGS = ±20V, VDS = 0V
Q1 80
Q2 -80
V
Q1
84
Q2
-67
mV/°C
Q1
Q2
1
-1
µA
Q1
±100 nA
Q2
±100 nA
On Characteristics
VGS(th)
∆VGS(th)
∆TJ
rDS(on)
gFS
Gate to Source Threshold Voltage
VGS = VDS, ID = 250µA
VGS = VDS, ID = -250µA
Q1 2.0 2.6
Q2 -1.0 -1.6
Gate to Source Threshold Voltage
ID = 250µA, referenced to 25°C
Q1
-6.7
Temperature Coefficient
ID = -250µA, referenced to 25°C
Q2
4.6
VGS = 10V, ID = 4.3A
64
VGS = 6.0V, ID = 4.1A
Q1
70
Static Drain to Source On Resistance VGS = 10V, ID = 4.3A, TJ = 125°C
121
VGS = -10V, ID = -2.8A
153
VGS = -4.5V, ID = -2.6A
Q2
184
VGS = -10V, ID = -2.8A, TJ = 125°C
259
Forward Transconductance
VDD = 10V, ID = 4.3A
VDD = -5V, ID = -2.8A
Q1
15
Q2
6.8
Dynamic Characteristics
Ciss
Coss
Input Capacitance
Output Capacitance
Q1
Q1
600
VDS = 40V, VGS = 0V, f = 1MHZ
Q2
660
Q1
56
Q2
Q2
50
Crss
Reverse Transfer Capacitance
VDS = -40V, VGS = 0V, f = 1MHZ Q1
Q2
27
25
Rg
Gate Resistance
f = 1MHz
Q1
1.7
Q2
7.2
4.0
-3.0
V
mV/°C
80
88
152
mΩ
190
224
322
S
800
880
pF
75
70
pF
41
40
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Rise Time
td(off)
Turn-Off Delay Time
tf
Fall Time
Qg(TOT)
Total Gate Charge
Qgs
Gate to Source Charge
Qgd
Gate to Drain “Miller” Charge
Q1
Q1
Q2
VDD = 40V, ID = 4.3A,
Q1
VGS = 10V, RGEN = 6Ω
Q2
Q2
Q1
VDD = -40V, ID = -2.8A,
Q2
VGS = -10V, RGEN = 6Ω
Q1
Q2
Q1
Q1
Q2
VGS = 10V, VDD = 40V, ID = 4.3A
Q1
Q2
Q2
VGS = -10V, VDD = -40V, ID = -2.8A
Q1
Q2
7
6
13
11
ns
2
3
10
10
ns
16
25
29
40
ns
2
5
10
10
ns
13
14
18
20
nC
2.3
1.9
nC
3.2
2.9
nC
FDD3510H Rev.C
2
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