FDD3510H 데이터 시트보기 (PDF) - Fairchild Semiconductor
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FDD3510H Datasheet PDF : 10 Pages
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Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 4.3A
8
VDD = 40V
6
VDD = 30V
4
VDD = 50V
1000
100
Ciss
Coss
2
0
0
2
4
6
8 10 12 14
Qg, GATE CHARGE(nC)
Figure 7. Gate Charge Characteristics
5
4
3
TJ = 25oC
2
TJ = 125oC
1
0.01
0.1
1
10
tAV, TIME IN AVALANCHE(ms)
Figure 9. Unclamped Inductive
Switching Capability
50
10
100us
THIS AREA IS
1 LIMITED BY rDS(on)
0.1
0.05
0.5 1
SINGLE PULSE
TJ = MAX RATED
RθJC = 3.5oC/W
TC = 25oC
10
1ms
10ms
100ms
DC
100
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
f = 1MHz
VGS = 0V
Crss
10
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance vs Drain
to Source Voltage
15
12
VGS = 10V
9
VGS = 6V
6
3
RθJC = 3.5oC/W
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
Figure 10. Maximum Continuous Drain
Current vs Case Temperature
105
VGS = 10V
104
103
SINGLE PULSE
RθJC = 3.5oC/W
TC = 25oC
102
10
10-6
10-5
10-4
10-3
10-2
10-1
1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
FDD3510H Rev.C
5
www.fairchildsemi.com
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