40N03 데이터 시트보기 (PDF) - GTM CORPORATION

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40N03

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

GTM CORPORATION 

ISSUED DATE :2005/01/25

REVISED DATE :2005/12/12B

Fig 7. Maximum Safe Operating Area Fig 8. Effective Transient Thermal Impedance

Fig 9. Gate Charge Characteristics

Fig 10. Typical Capacitance Characteristics

Fig 11. Forward Characteristics of

Reverse Diode

GE40N03

Fig 12. Gate Threshold Voltage v.s.

Junction Temperature

Page: 4/5

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