6R199P(2011) 데이터 시트보기 (PDF) - Infineon Technologies

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6R199P
(Rev.:2011)

CoolMOS® Power Transistor

Infineon Technologies 

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Continuous diode forward current

Diode pulse current2)

Reverse diode dv /dt 4)

Symbol Conditions

IS

I S,pulse

T C=25 °C

dv /dt

IPB60R199CP

Value

9.9

51

15

Unit

A

V/ns

Parameter

Symbol Conditions

Values

Unit

min. typ. max.

Thermal characteristics

Thermal resistance, junction - case R thJC

-

Thermal resistance, junction -

ambient

SMD version, device

R thJA on PCB, minimal

-

footprint

SMD version, device

on PCB, 6 cm2 cooling -

area5)

Soldering temperature,

wave- & reflowsolderin allowed

T sold

reflow MSL1

-

-

0.9 K/W

-

62

35

-

-

260 °C

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Rev. 2.2

V (BR)DSS V GS=0 V, I D=250 µA

V GS(th) V DS=V GS, I D=0.66 mA

600

2.5

I DSS

V DS=600 V, V GS=0 V,

T j=25 °C

-

V DS=600 V, V GS=0 V,

T j=150 °C

-

I GSS

V GS=20 V, V DS=0 V

-

R DS(on)

V GS=10 V, I D=9.9 A,

T j=25 °C

-

V GS=10 V, I D=9.9 A,

T j=150 °C

-

RG

f =1 MHz, open drain

-

-

3

-

10

-

0.18

0.49

2

-V

3.5

1 µA

-

100 nA

0.199 Ω

-

-Ω

page 2

2011-12-20

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