IRF9520NPBF 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.

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IRF9520NPBF

HEXFET® Power MOSFET

Kersemi Electronic Co., Ltd. 

100

10

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

IRF9520NPbF

100

10

VGS

TOP -15V

-10V

-8.0V

-7.0V

-6.0V

-5.5V

-5.0V

BOTTOM -4.5V

1

0.1

0.1

-4.5V 20µs PULSE WIDTH

TJ = 25 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics,

1

-4.5V

0.1

0.1

20µs PULSE WIDTH

TJ = 150 °C

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics,

100

TJ = 175° C

10

TJ = 25° C

1

0.1

4

V DS = 10V

20µs PULSE WIDTH

5

6

7

8

9

10

-VGS , Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

2.5 ID = -6.7A

2.0

1.5

1.0

0.5

VGS = -10V

0.0

-60 -40 -20 0 20 40 60 80 100 120 140 160 180

TJ , Junction Temperature ( °C)

Fig 4. Normalized On-Resistance

Vs. Temperature

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