ISL625(2005) 데이터 시트보기 (PDF) - Intersil
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ISL625 Datasheet PDF : 20 Pages
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ISL6251, ISL6251A
Absolute Maximum Ratings
DCIN, CSIP, CSON to GND. . . . . . . . . . . . . . . . . . . . . -0.3V to +28V
CSIP-CSIN, CSOP-CSON . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
PHASE to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -7V to 30V
BOOT to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +35V
BOOT-PHASE, VDD-GND, VDDP-PGND,
ACPRN to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to 7V
ACSET to GND (Note 3) . . . . . . . . . . . . . . . . . . -0.3V to VDD+0.3V
ICM, ICOMP, VCOMP to GND. . . . . . . . . . . . . . -0.3V to VDD+0.3V
ACLIM, CHLIM, VREF, CELLS to GND . . . . . . . -0.3V to VDD+0.3V
EN, VADJ, PGND to GND . . . . . . . . . . . . . . . . . .-0.3V to VDD+0.3V
UGATE. . . . . . . . . . . . . . . . . . . . . . . . . PHASE-0.3V to BOOT+0.3V
LGATE . . . . . . . . . . . . . . . . . . . . . . . . . . PGND-0.3V to VDDP+0.3V
Thermal Information
Thermal Resistance
θJA(°C/W) θJC (°C/W)
QFN Package (Notes 4, 6). . . . . . . . . .
39
9.5
QSOP Package (Note 5) . . . . . . . . . . .
88
N/A
ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Level 2
Junction Temperature Range. . . . . . . . . . . . . . . . . .-10°C to +150°C
Operating Temperature Range . . . . . . . . . . . . . . . .-10°C to +100°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Lead Temperature (soldering, 10s) . . . . . . . . . . . . . . . . . . . . +300°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
3. When the voltage across ACSET is below 0V, the current through ACSET should be limited to less than 1mA.
4. θJA is measured in free air with the component mounted on a high effective thermal conductivity test board with “direct attach” features. See Tech
Brief TB379.
5. θJA is measured with the component mounted on a high effective thermal conductivity test board in free air. See Tech Brief TB379 for details.
6. For θJC, the “case temp” location is the center of the exposed metal pad on the package underside.
Electrical Specifications
DCIN=CSIP=CSIN=18V, CSOP=CSON=12V, ACSET=1.5V, ACLIM=VREF, VADJ=Floating, EN=VDD=5V,
BOOT-PHASE=5.0V, GND=PGND=0V, CVDD=1µF, IVDD=0mA, TA=-10°C to +100°C, TJ ≤ 125°C, unless
otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
SUPPLY AND BIAS REGULATOR
DCIN Input Voltage Range
7
25
V
DCIN Quiescent Current
EN=VDD or GND, 7V ≤ DCIN ≤ 25V
1.4
3
mA
Battery Leakage Current (Note 7)
DCIN=0, no load
3
10
µA
VDD Output Voltage/Regulation
VDD Undervoltage Lockout Trip Point
7V ≤ DCIN ≤ 25V, 0 ≤ IVDD ≤ 30mA
VDD Rising
4.925
5.075
5.225
V
4.0
4.4
4.6
V
Hysteresis
200
250
400
mV
Reference Output Voltage VREF
0 ≤ IVREF ≤ 300µA
2.365
2.39
2.415
V
Battery Charge Voltage Accuracy
CSON=16.8V, CELLS=VDD, VADJ=Float
-0.5
0.5
%
CSON=12.6V, CELLS=GND, VADJ=Float
-0.5
0.5
%
CSON=8.4V, CELLS=Float, VADJ=Float
-0.5
0.5
%
CSON=17.64V, CELLS=VDD, VADJ=VREF
-0.5
0.5
%
CSON=13.23V, CELLS=GND, VADJ=VREF
-0.5
0.5
%
CSON=8.82V, CELLS=Float, VADJ=VREF
-0.5
0.5
%
CSON=15.96V, CELLS=VDD, VADJ=GND
-0.5
0.5
%
CSON=11.97V, CELLS=GND, VADJ=GND
-0.5
0.5
%
CSON=7.98V, CELLS=Float, VADJ=GND
-0.5
0.5
%
TRIP POINTS
ACSET Threshold
1.24
1.26
1.28
V
ACSET Input Bias Current Hysteresis
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET ≥ 1.26V
2.2
3.4
4.4
µA
ACSET Input Bias Current
ACSET < 1.26V
-1
0
1
µA
3
FN9202.1
June 17, 2005
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