JCS7N60 데이터 시트보기 (PDF) - Jilin Sino-Microelectronics

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JCS7N60

N-CHANNEL MOSFET

Jilin Sino-Microelectronics 

R

电特性 ELECTRICAL CHARACTERISTICS

JCS7N60

项目

符号

测试条件

最小 典型 最 大单 位

Parameter

Symbol

Tests conditions

Min Typ Max Units

关态特性 Off –Characteristics

漏－源击穿电压

Drain-Source Voltage

BVDSS

ID=250μA, VGS=0V

600 - - V

击穿电压温度特性

Breakdown Voltage Temperature

Coefficient

ΔBVDSS/Δ ID=250μA, referenced to

TJ

25℃

-

0.65 -

V/℃

零栅压下漏极漏电流

Zero Gate Voltage Drain Current

IDSS

正向栅极体漏电流

VDS=600V,VGS=0V,

TC=25℃

VDS=480V, TC=125℃

- - 10 μA

- - 100 μA

Gate-body leakage current,

forward

IGSSF

VDS=0V, VGS =30V

- - 100 nA

反向栅极体漏电流

Gate-body leakage current,

reverse

IGSSR

VDS=0V, VGS =-30V

- - -100 nA

通态特性 On-Characteristics

阈值电压

Gate Threshold Voltage

VGS(th)

VDS = VGS , ID=250μA

2.0 - 4.0 V

静态导通电阻

Static Drain-Source

On-Resistance

RDS(ON) VGS =10V , ID=3.5A

- 1.0 1.2 Ω

正向跨导

Forward Transconductance

gfs

VDS = 40V, ID=3.5A（note 4） - 8.2 - S

动态特性 Dynamic Characteristics

输入电容

Input capacitance

输出电容

Output capacitance

Ciss

Coss

VDS=25V,

VGS =0V,

f=1.0MHZ

- 1380 1800 pF

- 115 150 pF

反向传输电容

Reverse transfer capacitance

Crss

- 23 30 pF

版本：201006A

3/12

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