2SK2461 데이터 시트보기 (PDF) - NEC => Renesas Technology
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2SK2461 Datasheet PDF : 8 Pages
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DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
160
120
VGS = 4 V
80
VGS = 10 V
40
0
ID = 10 A
–50
0
50
100
150
Tch - Channel Temperature - ˚C
10 000
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
VGS = 0
f = 1 MHz
1 000
100
Ciss
Coss
Crss
10
1
10
100
1 000
VDS - Drain to Source Voltage - V
10 000
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
di/dt = 50 A/µs
VGS = 0
1 000
100
10
0.1
1.0
10
100
ID - Drain Current - A
2SK2461
1000
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
4V
10
VGS = 0
1
0
1.0
2.0
3.0
VSD - Source to Drain Voltage - V
1 000
SWITCHING CHARACTERISTICS
100
10
1.0
0.1
td(off)
tf
tr
td(on)
VDD = 50 V
VGS =10 V
RG =10 Ω
1.0
10
100
ID - Drain Current - A
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
80
VDD = 80 V 16
ID = 20 A 14
60
VDS
12
VGS
10
40
8
6
20
4
2
0
0
20
40
60
80
Qg - Gate Charge - nC
5
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