M81019FP 데이터 시트보기 (PDF) - MITSUBISHI ELECTRIC

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M81019FP

1200V HIGH VOLTAGE HALF BRIDGE DRIVER

MITSUBISHI ELECTRIC  

MITSUBISHI SEMICONDUCTORS <HVIC>

M81019FP

1200V HIGH VOLTAGE HALF BRIDGE DRIVER

8. ACTIVE MILLER EFFECT CLAMP NMOS OUTPUT TIMING DIAGRAM

The structure of the output driver stage is shown in following figure. This circuit structure employs a solution for the problem

of the Miller current through Cres in IGBT switching applications. Instead of driving the IGBT gate to a negative voltage to

increase the safety margin, this circuit structure uses a NMOS to establish a low impedance path to prevent the self-turn-on

due to the parasitic Miller capacitor in power switches.

VIN=0

(from HIN/LIN)

VPG/VN1G

VBS/VCC

P1

Cres

VOUT

N1

Cies

N2

high dv/dt

VN2G

VS/VNO

Active Miller Effect

Clamp NMOS

When HIN/LIN is at low level and the voltage of the VOUT (IGBT gate voltage) is below active Miller effect clamp NMOS

input threshold voltage, the active Miller effect clamp NMOS is being turned on and opens a low resistive path for the Miller

current through Cres.

VIN

VPG

VN1G

VOUT

VN2G

P1 ON

N1 OFF

N2 OFF

P1 OFF

N1 ON

Active Miller effect clamp

NMOS input threshold

P1 ON

N1 OFF

N2 ON

N2 OFF

TW

Active Miller effect clamp NMOS

keeps turn-on if TW does not exceed

active Miller clamp NMOS filter time

Aug. 2009

9

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