MC33797 데이터 시트보기 (PDF) - Freescale Semiconductor
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MC33797 Datasheet PDF : 32 Pages
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STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
Characteristics noted under conditions 4.75 V ≤ VDD ≤ 5.25 V; 7.0 V ≤ VVFIRE_XX ≤ 35 V; VVDIAG_X = VVFIRE_XX; FEN 1 = FEN 2
= VDD; RR_LIMIT_X = 10 kΩ ±1%, RR_DIAG = 10 kΩ ±1%, -40°C ≤ TA ≤ +85°C, GND = 0 unless otherwise noted. Typical values
noted reflect the approximate parameter means at TA = 25°C under nominal conditions unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
INPUT VOLTAGE (VDD)
Input Voltage
FET DRIVERS
VDD
4.57
5.0
5.25
V
Leakage Current at Minimum High Side Driver Breakdown Voltage
Leakage Current at Minimum Low Side Driver Breakdown Voltage
High-Side Driver Current Limit Range Set via Rlimit Resistor with Low
Battery Condition
tON ≤ 4.0 ms, RR_LIMIT_X = 10 kΩ, 5.0 V ≤ VVFIRE ≤ 7.0 V, RSQUIB =
2.0 Ω
High-Side Driver Low Current Limit Range Set via Rlimit Resistor
tON ≤ 2.6 ms, RR_LIMIT_X = RL=4.32 kΩ, 7.0 V ≤ VVFIRE ≤ 35 V
High-Side Driver Nominal Current Limit Range Set via Rlimit Resistor
tON ≤ 2.6 ms, RR_LIMIT_X = RL=10 kΩ, 7.0 V ≤ VVFIRE ≤ 35 V
High-Side Driver High Current Limit Range Set via Rlimit Resistor
tON ≤ 0.8 ms, RR_LIMIT_X = RL=45.3 kΩ, 7.0 V ≤ VVFIRE ≤ 35 V
Low-Side Drivers Current Limit
7.0 V = SQLO < 16 V
SQLO = 16 V
High-Side Driver Current Limit Detect Threshold (8)
7.0 V ≤ VVFIRE ≤ 35 V
Driver ON Resistance (per FET)
VVFIRE = 5.0 V, ILOAD = 0.5 A
VDD Operating Current
Standby (Diagnostics off, SPI “OFF”)
No Fire—Worst Case Diagnostics ($83/$2F Command Active)
Firing (with All FET Drivers “ON”)
VFIRE Quiescent Current (9)
With Diagnostics Off
VDIAG Current During Squib Diagnostics
With Squib Resistance Diagnostics Active
VFIRE Operating Current During Firing
Excluding Firing Current, IHS = 2.0 A
VDIAG Operating Current During Firing
Per VDIAG terminal, excluding Firing Current, IHS = 2.0 A
IDHSD
–
39
IDLSD
–
65
IHS(LBAT)
1.09
1.4
IHS(LOSET)
IHS(NOM)
IHS(HISET)
ILS
IMEAS
RDS(ON)
IDD
IRRE
IRRE
IRRE
IRRE
0.81
1.21
1.76
2.1
2.24
IHS x 0.85
–
–
–
–
22
32
–
–
0.93
1.4
2.0
2.47
2.65
–
–
2.0
15
4.3
34
37
1.8
140
100
µA
100
µA
A
2.9
A
1.03
A
1.54
A
2.24
A
3.0
3.14
A
IHS x 1.0
Ω
1.0
mA
5.0
17.5
6.0
µA
55
mA
43
mA
10
µA
200
Notes
8. Guaranteed by design
9. VFIRE quiescent current includes any leakage current through squib.
33797
6
Analog Integrated Circuit Device Data
Freescale Semiconductor
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