MCF5208CAB166 데이터 시트보기 (PDF) - Freescale Semiconductor

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MCF5208CAB166

ColdFire® Microprocessor

Freescale Semiconductor 

Electrical Characteristics

The average chip-junction temperature (TJ) in °C can be obtained from:

Where:

TJ = TA + (PD × ΘJMA)

Eqn. 1

TA

= Ambient Temperature, °C

QJMA

= Package Thermal Resistance, Junction-to-Ambient, ×C/W

PD

= PINT + PI/O

PINT

= IDD × IVDD, Watts - Chip Internal Power

PI/O

= Power Dissipation on Input and Output Pins — User Determined

For most applications PI/O < PINT and can be ignored. An approximate relationship between PD and TJ (if

PI/O is neglected) is:

Solving equations 1 and 2 for K gives:

PD

=

---------------K-----------------

(TJ + 273°C)

Eqn. 2

K

=

PD

×

(TA

×

273°C)

+

QJMA

×

P

2

D

Eqn. 3

where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring

PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by

solving Equation 1 and Equation 2 iteratively for any value of TA.

5.3

ESD Protection

Table 6. ESD Protection Characteristics1, 2

Characteristics

Symbol

Value

Unit

ESD Target for Human Body Model

HBM

2000

V

NOTES:

1 All ESD testing is in conformity with CDF-AEC-Q100 Stress Test Qualification for

Automotive Grade Integrated Circuits.

2 A device is defined as a failure if, after exposure to ESD pulses, the device no longer

meets the device specification requirements. Complete DC parametric and functional

testing is performed per applicable device specification at room temperature followed by

hot temperature, unless specified otherwise in the device specification.

5.4 DC Electrical Specifications

Table 7. DC Electrical Specifications

Characteristic

Core Supply Voltage

PLL Supply Voltage

CMOS Pad Supply Voltage

Symbol

Min

IVDD

1.4

PLLVDD

1.4

EVDD

3.0

MCF5208 ColdFire® Microprocessor Data Sheet, Rev. 1

20

Max

Unit

1.6

V

1.6

V

3.6

V

Freescale Semiconductor

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