MHVIC2114NR2 데이터 시트보기 (PDF) - Freescale Semiconductor
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MHVIC2114NR2 Datasheet PDF : 12 Pages
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TYPICAL CHARACTERISTICS
−30
VDD = 27 Vdc
−35 3GPP Test Model 1
64 DPCH
−40
−45
2110 MHz
−50
2170 MHz
−55
2140 MHz
−60
−65
17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34
Pout, OUTPUT POWER (dBm)
Figure 11. W - CDMA ACPR versus Output Power
−20
VDD = 27 Vdc
−30 Pout = 23 dBm Two−Tone Avg.
Tone Spacing = 100 kHz
−40
3rd Order
−50
−60
−70
5th Order
−80
IDQ3 = 100 mA
111 mA
122 mA
122 mA
100 mA
111 mA
−90
2000 2050 2100 2150 2200 2250 2300
f, FREQUENCY (MHz)
Figure 12. Two - Tone Intermodulation
Distortion Products versus Frequency
−10
−20
3rd Order
−30
5th Order
−40
−50
7th Order
−60
VDD = 27 Vdc, f = 2140 MHz
−70 Pout = 7.5 W, Two−Tone Avg.
−80 IDQ1 = 96 mA, IDQ2 = 204 mA, IDQ3 = 111 mA
0 10 20 30 40 50 60 70 80 90 100 110
TONE SPACING (MHz)
Figure 13. Two - Tone Intermodulation Distortion
Products versus Tone Spacing
7
6.75
6.5
6.25
6
VBIAS1
5.75
5.5 VBIAS2
5.25
5
4.75
4.5 VBIAS3
4.25
4
3.75
3.5
3.25
3
−40 −20
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
0
20
40
60
80 100
T, TEMPERATURE (C)
Figure 14. Fixture Bias versus Temperature
4.5
2
4.4
1.8
4.3
IGS1 & IGS2 1.6
4.2
4.1
4
3.9 VGS3
VDD = 27 Vdc, f = 2140 MHz
R1 = R2 = R3 = 1000 Ohms
1.4
1.2
VGS1 & VGS2 1
0.8
3.8
0.6
3.7
3.6 IGS3
3.5
−40 −30 −20 −10
0 10 20 30 40 50 60 70
T, TEMPERATURE (C)
0.4
0.2
0
80 90 100
Figure 15. Gate Bias versus Temperature
MHVIC2114NR2
6
RF Device Data
Freescale Semiconductor
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