MRF1550FNT1 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF1550FNT1

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

AMPLIFIER DESIGN

Impedance matching networks similar to those used with

bipolar transistors are suitable for this device. For examples

see Freescale Application Note AN721, “Impedance

Matching Networks Applied to RF Power Transistors.”

Large - signal impedances are provided, and will yield a good

first pass approximation.

Since RF power MOSFETs are triode devices, they are not

unilateral. This coupled with the very high gain of this device

yields a device capable of self oscillation. Stability may be

achieved by techniques such as drain loading, input shunt

resistive loading, or output to input feedback. The RF test fix-

ture implements a parallel resistor and capacitor in series

with the gate, and has a load line selected for a higher effi-

ciency, lower gain, and more stable operating region.

Two - port stability analysis with this device’s

S - parameters provides a useful tool for selection of loading

or feedback circuitry to assure stable operation. See Free-

scale Application Note AN215A, “RF Small - Signal Design

Using Two - Port Parameters” for a discussion of two port

network theory and stability.

MRF1550NT1 MRF1550FNT1

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RF Device Data

Freescale Semiconductor

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