MRF19060LR3 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRF19060LR3

RF Power Field Effect Transistors

Freescale Semiconductor 

Table 4. Electrical Characteristics (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Off Characteristics

Drain- Source Breakdown Voltage

(VGS = 0 Vdc, ID = 10 μAdc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate- Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

On Characteristics

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 300 μAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 500 mAdc)

Drain- Source On - Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Dynamic Characteristics

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc, VGS = 0, f = 1 MHz)

Functional Tests (In Freescale Test Fixture, 50 ohm system)

Two - Tone Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,

f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)

V(BR)DSS

65

IDSS

—

IGSS

—

VGS(th)

2

VGS(Q)

2.5

VDS(on)

—

Crss

—

Gps

11

Two - Tone Drain Efficiency

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,

f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)

η

33

3rd Order Intermodulation Distortion

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,

f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)

IMD

—

Input Return Loss

(VDD = 26 Vdc, Pout = 60 W PEP, IDQ = 500 mA,

f = 1930 MHz and 1990 MHz, Tone Spacing = 100 kHz)

IRL

—

Pout, 1 dB Compression Point

(VDD = 26 Vdc, Pout = 60 W CW, f = 1990 MHz)

1. Part is internally matched both on input and output.

P1dB

—

Typ

—

—

—

—

3.9

0.27

2.7

12.5

36

- 31

- 12

60

Max

Unit

—

Vdc

6

μAdc

1

μAdc

4

V

4.5

V

—

V

—

pF

—

dB

—

%

- 28

dBc

—

dB

—

W

MRF19060LR3 MRF19060LSR3

2

RF Device Data

Freescale Semiconductor

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