MRFE6S9130HSR3(2007) 데이터 시트보기 (PDF) - Freescale Semiconductor
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MRFE6S9130HSR3
(Rev.:2007)
(Rev.:2007)
Freescale Semiconductor
MRFE6S9130HSR3 Datasheet PDF : 11 Pages
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TYPICAL CHARACTERISTICS
0
VDD = 28 Vdc, Pout = 130 W (PEP)
−10 IDQ = 950 mA, Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 880 MHz
− 20
IM3 −L
− 30
IM3 −U
−40 IM5 −L
IM5 −U
− 50
IM7 −U
IM7 −L
− 60
1
10
60
TWO −TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Tone Spacing
60
59
P6dB = 52.95 dBm (197.24 W)
58
Ideal
57
56 P3dB = 52.26 dBm (168.27 W)
55
P1dB = 51.15 dBm
54 (130.31 W)
53
Actual
52
51
VDD = 28 Vdc, IDQ = 950 mA, Pulsed CW
12 μsec(on), 1% Duty Cycle, f = 880 MHz
50
31 32 33 34 35 36 37 38 39 40
Pin, INPUT POWER (dBm)
Figure 8. Pulsed CW Output Power versus
Input Power
60
− 20
VDD = 28 Vdc, IDQ = 950 mA, f = 880 MHz
50 N−CDMA IS−95, Pilot, Sync, Paging
Traffic Codes 8 Through 13
− 30
40
− 40
30
20
Gps
10
ACPR
ηD
− 50
ALT1
TC = −30_C −60
85_C
− 70
25_C
0
− 80
1
10
100 200
Pout, OUTPUT POWER (WATTS) CW
Figure 9. Single - Carrier N - CDMA ACPR, ALT1, Power
Gain and Drain Efficiency versus Output Power
21
20 Gps
19
18
TC = −30_C
25_C
85_C
70
25_C
−30_C 60
85_C 50
40
17
30
16
15 ηD
14
1
20
VDD = 28 Vdc
IDQ = 950 mA
10
f = 880 MHz
0
10
100
400
Pout, OUTPUT POWER (WATTS) CW
Figure 10. Power Gain and Drain Efficiency
versus CW Output Power
MRFE6S9130HR3 MRFE6S9130HSR3
6
RF Device Data
Freescale Semiconductor
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