MRFE6S9130HR3 데이터 시트보기 (PDF) - Freescale Semiconductor

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MRFE6S9130HR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Freescale Semiconductor 

f = 910 MHz

Zload

Zo = 2 Ω

f = 850 MHz

f = 910 MHz

Zsource

f = 850 MHz

VDD = 28 Vdc, IDQ = 950 mA, Pout = 27 W Avg.

f

MHz

Zsource

Ω

Zload

Ω

850

0.89 - j1.18

1.50 - j0.09

865

0.87 - j1.03

1.52 + j0.11

880

0.85 - j0.89

1.55 + j0.31

895

0.83 - j0.75

1.60 + j0.51

910

0.84 - j0.64

1.68 + j0.71

Zsource = Test circuit impedance as measured from

gate to ground.

Zload = Test circuit impedance as measured

from drain to ground.

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Z source

Z load

Figure 15. Series Equivalent Source and Load Impedance

MRFE6S9130HR3 MRFE6S9130HSR3

8

RF Device Data

Freescale Semiconductor

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