PMXB40UNE 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMXB40UNE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB40UNE
12 V, N-channel Trench MOSFET
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
IDSS
drain leakage current VDS = 12 V; VGS = 0 V; Tj = 25 °C
IGSS
gate leakage current VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 3.2 A; Tj = 25 °C
VGS = 4.5 V; ID = 3.2 A; Tj = 150 °C
VGS = 2.5 V; ID = 3.2 A; Tj = 25 °C
VGS = 1.8 V; ID = 1 A; Tj = 25 °C
VGS = 1.5 V; ID = 0.1 A; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
gfs
forward
VDS = 10 V; ID = 2 A; Tj = 25 °C
transconductance
RG
gate resistance
f = 1 MHz
Dynamic characteristics
QG(tot)
QGS
total gate charge
gate-source charge
VDS = 10 V; ID = 3.2 A; VGS = 4.5 V;
Tj = 25 °C
QGD
gate-drain charge
Ciss
input capacitance
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Coss
output capacitance
Tj = 25 °C
Crss
reverse transfer
capacitance
td(on)
tr
turn-on delay time
rise time
VDS = 10 V; ID = 3.2 A; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
td(off)
turn-off delay time
tf
fall time
Source-drain diode
VSD
source-drain voltage IS = 1 A; VGS = 0 V; Tj = 25 °C
Min Typ Max Unit
12
-
-
V
0.4 0.65 0.9 V
-
-
1
µA
-
-
10
µA
-
-
-10 µA
-
34
45
mΩ
-
49
67
mΩ
-
39
64
mΩ
-
46
85
mΩ
-
50
100 mΩ
-
121 -
mΩ
-
1.2 -
S
-
1
-
Ω
-
6.6 11.6 nC
-
0.6 -
nC
-
1.7 -
nC
-
556 -
pF
-
107 -
pF
-
94
-
pF
-
6
-
ns
-
21
-
ns
-
18
-
ns
-
9
-
ns
-
0.8 1.2 V
PMXB40UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
27 September 2013
© NXP N.V. 2013. All rights reserved
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