PMXB43UNE 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMXB43UNE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB43UNE
20 V, N-channel Trench MOSFET
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDS
drain-source voltage
Tj = 25 °C
VGS
gate-source voltage
ID
drain current
VGS = 4.5 V; Tamb = 25 °C
[1]
VGS = 4.5 V; Tamb = 100 °C
[1]
IDM
peak drain current
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Ptot
total power dissipation
Tamb = 25 °C
[2]
[1]
Tsp = 25 °C
Tj
junction temperature
Tamb
ambient temperature
Tstg
storage temperature
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
Min Max Unit
-
20
V
-8
8
V
-
3.2 A
-
2.3 A
-
12.8 A
-
0.4 W
-
1.07 W
-
8.33 W
-55 150 °C
-55 150 °C
-65 150 °C
-
0.9 A
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 6 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
120
017aaa123
120
017aaa124
Pder
Ider
(%)
(%)
80
80
40
40
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 2. Normalized total power dissipation as a
function of junction temperature
0
- 75
- 25
25
75
125
175
Tj (°C)
Fig. 3. Normalized continuous drain current as a
function of junction temperature
PMXB43UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
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