PMXB43UNE 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMXB43UNE Datasheet PDF : 15 Pages
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NXP Semiconductors
PMXB43UNE
20 V, N-channel Trench MOSFET
16
ID
(A)
12
4.5 V
2.5 V
8
4
aaa-009130
1.8 V
1.5 V
10-3
ID
(A)
10-4
aaa-009131
min
typ
max
10-5
VGS = 1.2 V
0
0
1
2
3
4
ID (A)
Tj = 25 °C
10-6
0
0.2
0.4
0.6
Tj = 25 °C; VDS = 5 V
0.8
1
VGS (V)
Fig. 7. Output characteristics: drain current as a
Fig. 8. Sub-threshold drain current as a function of
function of drain-source voltage; typical values
gate-source voltage
150
RDSon
(mΩ)
1.2 V
1.8 V
aaa-009132
2.0 V
150
RDSon
(mΩ)
aaa-009133
100
1.5 V
50
2.5 V
VGS = 4.5 V
100
Tj = 150 °C
50
Tj = 25 °C
0
0
4
Tj = 25 °C
8
12
16
ID (A)
Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values
0
0
1
2
3
4
5
VGS (V)
ID = 3.2 A
Fig. 10. Drain-source on-state resistance as a function
of gate-source voltage; typical values
PMXB43UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
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