PMXB43UNE 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMXB43UNE Datasheet PDF : 15 Pages
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NXP Semiconductors
16
ID
(A)
12
aaa-009134
PMXB43UNE
20 V, N-channel Trench MOSFET
2
a
1.5
aaa-009135
8
1
4
0.5
Tj = 150 °C
Tj = 25 °C
0
0
1
2
3
VGS (V)
VDS > ID × RDSon
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
0
-60
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
1.5
VGS(th)
(V)
1.0
0.5
aaa-009136
max
typ
min
103
C
(pF)
102
aaa-009137
Ciss
Crss
Coss
0
-60
0
60
ID = 0.25 mA; VDS = VGS
120
180
Tj (°C)
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
10
10-1
1
f = 1 MHz; VGS = 0 V
10
102
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB43UNE
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 September 2013
© NXP N.V. 2013. All rights reserved
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