PMXB56EN 데이터 시트보기 (PDF) - NXP Semiconductors.
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PMXB56EN Datasheet PDF : 16 Pages
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NXP Semiconductors
PMXB56EN
30 V, N-channel Trench MOSFET
12
ID
(A)
8
4
Tj = 150 °C
aaa-009046
1.8
a
1.5
1.2
0.9
aaa-009047
Tj = 25 °C
0
0
1
2
3
VDS > ID × RDSon
4
5
VGS (V)
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
3
aaa-009048
0.6
-60
0
60
120
180
Tj (°C)
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
103
aaa-009049
VGS(th)
(V)
C
(pF)
Ciss
2
max
102
typ
1
min
Coss
Crss
10
0
-60
0
60
120
180
Tj (°C)
ID = 0.25 mA; VDS = VGS
Fig. 13. Gate-source threshold voltage as a function of
junction temperature
1
10-1
1
f = 1 MHz; VGS = 0 V
10
102
VDS (V)
Fig. 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMXB56EN
Product data sheet
All information provided in this document is subject to legal disclaimers.
11 January 2017
© NXP Semiconductors N.V. 2017. All rights reserved
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