RJH30H2DPK-M0-T2 데이터 시트보기 (PDF) - Renesas Electronics

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RJH30H2DPK-M0-T2

Silicon N Channel IGBT High speed power switching

Renesas Electronics 

RJH30H2DPK-M0

Silicon N Channel IGBT

High speed power switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

 High speed switching: tr = 100 ns typ, tf = 180 ns typ

 Low leak current: ICES = 1 A max

 Built-in Fast Recovery Diode: VF = 1.4 V typ , trr = 23 ns typ

Outline

RENESAS Package code: PRSS0004ZH-A

(Package name: TO-3PSG)

4

G

12 3

Preliminary Datasheet

R07DS0464EJ0200

Rev.2.00

Jun 15, 2011

C

1. Gate

2. Collector

3. Emitter

4. Collector (Flange)

E

Absolute Maximum Ratings

Item

Collector to Emitter voltage

Gate to Emitter voltage

Collector current

Collector peak current

Collector to emitter diode Forward peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Tc = 25C

Symbol

VCES

VGES

Ic

ic(peak) Note1

iDF(peak) Note1

PC Note2

j-c

Tj

Tstg

Ratings

360

±30

35

250

100

60

2.08

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

A

W

°C/ W

°C

°C

R07DS0464EJ0200 Rev.2.00

Jun 15, 2011

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