Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits
English
한국어
日本語
русский
简体中文
español
부품명
상세내역
RJH30H2DPK-M0-T2 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
제조사
RJH30H2DPK-M0-T2
Silicon N Channel IGBT High speed power switching
Renesas Electronics
RJH30H2DPK-M0-T2 Datasheet PDF : 7 Pages
1
2
3
4
5
6
7
RJH30H2DPK-M0
Collector to Emitter Diode Forward Voltage vs.
Diode Forward Current
100
Pulse Test
Ta = 25
°
C
80
60
40
20
0
0
1
2
3
4
5
Collector to Emitter Diode
Forward Voltage V
ECF
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
3
Tc = 25
°
C
D=1
1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
0.03
0.01
0.01
PDM
1m
10 m
Pulse Width PW (s)
D=
PW
T
PW
T
100 m
1
Preliminary
Switching Time Test Circuit
Ic Monitor
R
L
Vin Monitor
Rg
D.U.T.
V
CC
Vin = 15 V
Waveform
90%
Vin
10%
90%
90%
Ic
td(on)
10%
tr
td(off)
ton
toff
10%
tf
R07DS0464EJ0200 Rev.2.00
Jun 15, 2011
Page 5 of 6
Share Link:
datasheetq.com [
Privacy Policy
]
[
Request Datasheet
] [
Contact Us
]