RJP30E2DPK-M0-T0 데이터 시트보기 (PDF) - Renesas Electronics
부품명
상세내역
제조사
RJP30E2DPK-M0-T0 Datasheet PDF : 7 Pages
| |||
RJP30E2DPK-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
0.1
1
10
100 1000
Collector to Emitter Voltage VCE (V)
Preliminary
Typical Output Characteristics (1)
100
Pulse Test
Ta = 25°C 7 V
80
7.5 V
8V
10 V
15 V
60
6.5 V
6V
5.5 V
40
5V
20
VGE = 4.5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
200
Pulse Test
Ta = 25°C
160
9.5 V
10 V
12 V
120
15 V
80
9 V 8.5 V
8V
7.5 V
7V
6.5 V
6V
5.5 V
40
VGE = 5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 10 V
Pulse Test
80
60
40
www.DataSheet.co.kr
20
75°C
25°C
0
0
2
4
Tc = –25°C
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
10
Pulse Test
Ta = 25°C
8
6
75 A 105 A
4
2
IC = 35 A
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = –25°C
1
25°C 75°C
0.1
1
10
100
Collector Current IC (A)
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 3 of 6
Share Link: 