RJP30E2DPK-M0-T0 데이터 시트보기 (PDF) - Renesas Electronics
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RJP30E2DPK-M0-T0 Datasheet PDF : 7 Pages
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RJP30E2DPK-M0
Typical Capacitance vs.
Colloctor to Emitter Voltage
10000
VGE = 0 V
f = 1 MHz
Ta = 25°C
1000
Cies
100
Coes
Cres
10
0
20 40 60 80 100
Colloctor to Emitter Voltage VCE (V)
Switching Characteristics (Typical) (1)
1000
tr
tf
100
td(off)
td(on)
10
1
10
100
Colloctor Current IC (A)
Switching Characteristics (Typical) (3)
1000
tf
tr
100
td(off)
td(on)
10
0 25 50 75 100 125 150
Case Temperature Tc (°C)
Preliminary
Dynamic Input Characteristics (Typical)
400
16
IC = 35 A
VGE
300
VCE
VCE = 250 V 12
150 V
200
8
100
0
0
4
VCE = 250 V
150 V
0
10 20 30 40 50
Gate Charge Qg (nC)
Switching Characteristics (Typical) (2)
1000
tf
100 tr
www.DataSheet.co.kr
td(on)
10
1
td(off)
10
100
R07DS0348EJ0100 Rev.1.00
Apr 12, 2011
Page 4 of 6
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