RJP30H1DPD 데이터 시트보기 (PDF) - Renesas Electronics

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RJP30H1DPD

N-Channel Power MOSFET / TO-263

Renesas Electronics 

RJP30H1DPD

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation

voltage

VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test

Preliminary

Typ

—

—

—

1.5

740

40

17

23

4

8

0.02

0.08

0.04

0.15

Max

1

±100

5

2

—

—

—

—

—

—

—

—

—

—

Unit

A

nA

V

V

(Tj = 25°C)

Test Conditions

VCE = 360 V, VGE = 0

VGE = ± 30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 30A, VGE = 15 V Note3

pF VCE = 25 V

pF VGE = 0

pF f = 1 MHz

nC VGE = 15 V

nC VCE = 150 V

nC IC = 30 A

s IC = 30 A

s RL = 5 

s VGE = 15 V

s RG = 5 

R07DS0465EJ0200 Rev.2.00

Jun 15, 2011

Page 2 of 6

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