RJP63F3DPP-M0 데이터 시트보기 (PDF) - Renesas Electronics
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RJP63F3DPP-M0 Datasheet PDF : 7 Pages
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RJP63F3DPP-M0
Main Characteristics
Maximum Safe Operation Area
1000
100
10 μs
10
1
0.1
Ta = 25°C
1 shot pulse
0.01
1
10
100
1000
Collector to Emitter Voltage VCE (V)
Typical Output Characteristics (2)
200
Pulse Test
Ta = 25°C
160 10 V
12 V
120 15 V
80
9V
8.5 V
8V
7.5 V
7V
6.5 V
6V
5.5 V
40
VGE = 5 V
0
0
2
4
6
8
10
Collector to Emitter Voltage VCE (V)
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
8
Pulse Test
Ta = 25°C
6
4
IC = 120 A
2
80 A
40 A
0
0
4
8
12 16 20
Gate to Emitter Voltage VGE (V)
R07DS0321EJ0200 Rev.2.00
May 26, 2011
Preliminary
Typical Output Characteristics (1)
100
Pulse Test
Ta = 25°C
80
7.5 V
8V
60
10 V
15 V
40
7 V 6.5 V
6V
5.5 V
20
VGE = 5 V
0
0
1
2
3
4
5
Collector to Emitter Voltage VCE (V)
Typical Transfer Characteristics
100
VCE = 10 V
Pulse Test
80
60
40
Tc = 125°C
20
75°C
0
0
2
4
25°C
6
8
10
Gate to Emitter Voltage VGE (V)
Collector to Emitter Saturation Voltage
vs. Collector Current (Typical)
10
VGE = 15 V
Pulse Test
Tc = 125°C
1
75°C
25°C
0.1
1
10
100
Collector Current IC (A)
Page 3 of 6
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