RJP63K2DPP-M0 데이터 시트보기 (PDF) - Renesas Electronics

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RJP63K2DPP-M0

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP63K2DPP-M0

Silicon N Channel IGBT

High Speed Power Switching

Features

 Trench gate and thin wafer technology (G6H-II series)

 Low collector to emitter saturation voltage: VCE(sat) = 1.9 V typ

 High speed switching: tr = 60 ns typ, tf = 200 ns typ.

 Low leak current: ICES = 1 A max

 Isolated package TO-220FL

Outline

RENESAS Package code: PRSS0003AF-A)

(Package name: TO-220FL)

G

1

23

Preliminary Datasheet

R07DS0468EJ0200

Rev.2.00

Jun 15, 2011

C

1. Gate

2. Collector

3. Emitter

E

Absolute Maximum Ratings

Item

Collector to emitter voltage

Gate to emitter voltage

Collector current

Collector peak current

Collector dissipation

Junction to case thermal impedance

Junction temperature

Storage temperature

Notes: 1. PW  10 s, duty cycle  1%

2. Tc = 25C

Symbol

VCES

VGES

IC

ic(peak) Note1

PC Note2

j-c

Tj

Tstg

Ratings

630

±30

35

200

25

5

150

–55 to +150

(Ta = 25°C)

Unit

V

V

A

A

W

°C/W

°C

°C

R07DS0468EJ0200 Rev.2.00

Jun 15, 2011

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