RJP63K2DPP-M0 데이터 시트보기 (PDF) - Renesas Electronics

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RJP63K2DPP-M0

Silicon N Channel IGBT High Speed Power Switching

Renesas Electronics 

RJP63K2DPP-M0

Electrical Characteristics

Item

Symbol Min

Zero gate voltage collector current

ICES

—

Gate to emitter leak current

IGES

—

Gate to emitter cutoff voltage

VGE(off)

2.5

Collector to emitter saturation

voltage

VCE(sat)

—

Input capacitance

Cies

—

Output capacitance

Coes

—

Reveres transfer capacitance

Cres

—

Total gate charge

Qg

—

Gate to emitter charge

Qge

—

Gate to collector charge

Qgc

—

Switching time

td(on)

—

tr

—

td(off)

—

tf

—

Notes: 3. Pulse test

Preliminary

Typ

—

—

—

1.9

620

26

11

20

3

7

0.02

0.06

0.05

0.2

Max

1

±100

5

2.4

—

—

—

—

—

—

—

—

—

—

Unit

A

nA

V

V

(Ta = 25°C)

Test Conditions

VCE = 630 V, VGE = 0

VGE = ± 30 V, VCE = 0

VCE = 10 V, IC = 1 mA

IC = 35 A, VGE = 15 V Note3

pF VCE = 25 V

pF VGE = 0

pF f = 1 MHz

nC VGE = 15 V

nC VCE = 300 V

nC IC = 35 A

s IC = 35 A

s RL = 8.5 

s VGE = 15 V

s RG = 5 

R07DS0468EJ0200 Rev.2.00

Jun 15, 2011

Page 2 of 6

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