SG6100 데이터 시트보기 (PDF) - Microsemi Corporation
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SG6100 Datasheet PDF : 3 Pages
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DIODE ARRAY SERIES
ABSOLUTE MAXIMUM RATINGS (Note 1 & 2)
Breakdown Voltage (VBR) .................................................... 75V
Output Current (IO), TC = 25°C
Continuous ................................................................. 300mA
Note 1. Exceeding these ratings could cause damage to the device.
Note 2. Applicable for each diode.
THERMAL DATA
J Package (14 & 16 Pin):
Thermal Resistance-Junction to Case, θJC .................. 30°C/W
Thermal Resistance-Junction to Ambient, θJA .............. 80°C/W
F Package (14 Pin):
Thermal Resistance-Junction to Case, θJC .................. 80°C/W
Thermal Resistance-Junction to Ambient, θJA ........... 140°C/W
F Package (16 Pin):
Thermal Resistance-Junction to Case, θJC .................. 70°C/W
Thermal Resistance-Junction to Ambient, θJA ........... 115°C/W
Operating Junction Temperature
Hermetic (J, F Packages) ............................................ 150°C
Storage Temperature Range ............................ -65°C to 200°C
Lead Temperature (Soldering, 10 seconds) .................. 300°C
Note A.
Junction Temperature Calculation:
T
J
=
T
A
+
(P
D
x
θJA).
Note B. The above numbers for θJC are maximums for the limiting
thermal resistance of the package in a standard mount-
ing configuration. The θJA numbers are meant to be
guidelines for the thermal performance of the device/pc-
board system. All of the above assume no ambient
airflow.
RECOMMENDED OPERATING CONDITIONS (Note 3)
Operating Ambient Temperature Range
SG6100 .......................................................... -55°C to 150°C
SG6101 .......................................................... -55°C to 150°C
Note 3. Range over which the device is functional.
SG6511 .......................................................... -55°C to 150°C
SG6510 .......................................................... -55°C to 150°C
ELECTRICAL CHARACTERISTICS
(Unless
otherwise specified, these specifications
apply for the
operating
ambient temperature of T =
A
25°C for each diode.
Low duty cycle pulse
testing
techniques are used which maintains junction and case temperatures equal to the ambient temperature.)
Parameter
Breakdown Voltage (VBR)
Forward Voltage (V )
F
Reverse Current (I )
R
Capacitance (C) (Note 4)
Forward Recovery Time (tfr)
(Note 4)
Reverse Recovery Time (t )
rr
(Note 4)
Test Conditions
IR = 5µA, Duty Cycle < 20%
Duty Cycle ≤ 2%, 300 µs pulse
IF = 100mA
IF = 10mA, TA = -55°C
V = 20V
R
VR = 40V
VR = 40V, TA = 150°C
V = 0V, f = 1MHz, Pin-to-pin
R
IF = 500mA, tr ≤ 15ns, Vfr = 1.8V, RS = 50Ω
IF = IR = 200mA, irr = 20mA, RL = 100Ω
SG6100/SG6511
SG6010/SG6510
Min. Typ. Max.
75
Units
V
1.0 V
1.0 V
25 nA
100 nA
50 µA
4
pf
15 ns
5
ns
Note 4. The parameters, although guaranteed, are not 100% tested in production.
6/91 Rev 1.1 2/94
Copyright © 1994
LINFINITY Microelectronics Inc.
2
11861 Western Avenue ∞ Garden Grove, CA 92841
(714) 898-8121 ∞ FAX: (714) 893-2570
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