SIM150D12SV3 데이터 시트보기 (PDF) - SemiWell Semiconductor
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SIM150D12SV3 Datasheet PDF : 8 Pages
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Preliminary
SIM150D12SV3
Switching Characteristic @ Tj = 25℃ (unless otherwise specified)
Symbol
Parameters
Min Typ Max Unit
Test conditions
Cies
Input capacitance
Coss Output capacitance
Cres Reverse transfer capacitance
-
8200
-
-
790
-
-
320
-
VCC = 30V, VGE = 0V
pF
f = 1.0MHz
td(on) Turn-on delay time
tr
Rise time
td(off) Turn-off delay time
tf
Fall time
-
105
-
-
45
-
-
425
-
-
58
-
Tj = 125℃, VCC = 600V
ns IC = 150A, VGE = 15V
RG = 4.7Ω
Irr
Diode Peak Reverse Recovery current
-
55
-
trr
Diode Reverse Recovery time
-
185
-
A
Tj = 125℃, VCC = 600V
IF = 150A, VGE = 15V
ns RG = 4.7Ω, di/dt=1200A/us
Thermal Characteristic Values
Symbol
Parameters
RΘJC
Junction-to-Case (IGBT Part, Per 1/2 Module)
RΘJC
Junction-to-Case (Diode Part, Per 1/2 Module)
RΘCS
Case-to-Heat Sink (Conductive grease applied)
Min
Typ
Max
Unit
-
-
0.15
-
-
0.30
℃/W
-
0.04
-
-2-
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