SMK0460D 데이터 시트보기 (PDF) - AUK -> KODENSHI CORP
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SMK0460D Datasheet PDF : 8 Pages
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SMK0460D
Electrical Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown voltage
BVDSS ID=250uA, VGS=0
Gate threshold voltage
VGS(th)
ID=250uA, VDS=VGS
Drain-source cut-off current
Gate leakage current
Drain-source on-resistance
④
Forward transfer conductance ④
IDSS
IGSS
RDS(ON)
gfs
VDS=600V, VGS=0V
VDS=0V, VGS=±30V
VGS=10V, ID=2.0A
VDS=10V, ID=2.0A
Input capacitance
Output capacitance
Reverse transfer capacitance
Ciss
Coss
Crss
VGS=0V, VDS=25V,
f=1MHz
Turn-on delay time
Rise time
Turn-off delay time
td(on)
tr
td(off)
VDD=300V, ID=4.0A
RG=25Ω
③④
Fall time
tf
Total gate charge
Gate-source charge
Gate-drain charge
Qg
VDS=480V, VGS=10V
Qgs
ID=4.0A
Qgd
③④
Min.
600
2.0
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
-
-
2.1
4.0
670
57
9.8
10
42
38
46
12
4
3
Max.
-
4.0
1
±100
2.5
-
848
71
12.2
-
-
-
-
15
-
-
Unit
V
V
uA
nA
Ω
S
pF
ns
nC
Source-Drain Diode Ratings and Characteristics (TC=25°C unless otherwise noted)
Characteristic
Symbol
Test Condition
Min. Typ. Max.
Source current (DC)
Source current (Pulsed)
Forward voltage
IS
Integral reverse diode
①
ISM
in the MOSFET
④
VSD
VGS=0V, IS=4.0A
-
-
4
-
-
16
-
-
1.4
Reverse recovery time
Reverse recovery charge
trr
IS=4.0A, VGS=0V
Qrr
dIF/dt=100A/us
-
300
-
-
2.2
-
Unit
A
V
ns
uC
Note ;
① Repetitive rating : Pulse width limited by maximum junction temperature
② L=25.9mH, IAS=4.0A, VDD=50V, RG=25Ω, Starting TJ=25℃
③ Pulse Test : Pulse width≤300us, Duty cycle≤2%
④ Essentially independent of operating temperature
KSD-T6O015-001
2
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