SST39LF100 데이터 시트보기 (PDF) - Silicon Storage Technology
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SST39LF100 Datasheet PDF : 22 Pages
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1 Mbit Multi-Purpose Flash
SST39LF100 / SST39VF100
Data Sheet
TABLE 5: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF100 AND 2.7-3.6V FOR SST39VF100
Limits
Symbol Parameter
Min Max Units Test Conditions
IDD
ISB
ILI
ILO
VIL
VIH
VIHC
VOL
VOH
Power Supply Current
Read
Program and Erase
Standby VDD Current
Input Leakage Current
Output Leakage Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS)
Output Low Voltage
Output High Voltage
30
30
20
1
10
0.8
0.7VDD
VDD-0.3
0.2
VDD-0.2
Address input = VIL/VIH, at f=1/TRC Min.,
VDD=VDD Max.
mA CE#=OE#=VIL,WE#=VIH, all I/Os open
mA CE#=WE#=VIL, OE#=VIH
µA CE#=VIHC, VDD = VDD Max.
µA VIN =GND to VDD, VDD = VDD Max.
µA VOUT =GND to VDD, VDD = VDD Max.
VDD = VDD Min.
V VDD = VDD Max.
V VDD = VDD Max.
V IOL = 5.8 mA, VDD = VDD Min.
V IOH = -100 µA, VDD = VDD Min.
T5.5 363
TABLE 6: RECOMMENDED SYSTEM POWER-UP TIMINGS
Symbol
Parameter
Minimum
Units
TPU-READ1
Power-up to Read Operation
100
µs
TPU-WRITE1
Power-up to Program/Erase Operation
100
µs
T6.0 363
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 7: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open)
Parameter
Description
Test Condition
Maximum
CI/O1
CIN1
I/O Pin Capacitance
Input Capacitance
VI/O = 0V
VIN = 0V
12 pF
6 pF
T7.0 363
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
TABLE 8: RELIABILITY CHARACTERISTICS
Symbol
Parameter
Minimum Specification
Units Test Method
NEND1
Endurance
10,000
Cycles JEDEC Standard A117
TDR1
Data Retention
100
Years JEDEC Standard A103
ILTH1
Latch Up
100 + IDD
mA JEDEC Standard 78
T8.1 363
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
©2001 Silicon Storage Technology, Inc.
7
S71129-02-000 6/01 363
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