GP200MHS18 데이터 시트보기 (PDF) - Dynex Semiconductor
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GP200MHS18 Datasheet PDF : 10 Pages
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GP200MHS18
TYPICAL CHARACTERISTICS
400
Common emitter
Tcase = 25˚C
350
Vge = 20/15/12V
300
Vge = 10V
250
200
150
100
50
0
0
1.0 2.0 3.0 4.0 5.0 6.0 7.0
Collector-emitter voltage, Vce - (V)
Fig. 3 Typical output characteristics
400
Common emitter
350 Tcase = 125˚C
Vge = 20/15/12V
300
Vge = 10V
250
200
150
100
50
0
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0
Collector-emitter voltage, Vce - (V)
Fig. 4 Typical output characteristics
250
Tcase = 25˚C
VGE = ±15V
VCE = 900V
200
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 4.7Ω
150
A
100
B
C
50
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 5 Typical turn-on energy vs collector current
300
Tcase = 125˚C
VGE = ±15V
VCE = 900V
250
A
200
B
150
100
C
50
A: Rg = 15Ω
B: Rg = 10Ω
C: Rg = 4.7Ω
0
0
50
100
150
200
Collector current, IC - (A)
Fig. 6 Typical turn-on energy vs collector current
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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