UPD5702TU 데이터 시트보기 (PDF) - California Eastern Laboratories.

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UPD5702TU

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

California Eastern Laboratories. 

Si LDMOSFET ANALOG RF INTEGRATED CIRCUIT

µPD5702TU

3V OPERATION SILICON LDMOSFET RF POWER AMPLIFIER INTEGRATED CIRCUIT

FOR 1.9 GHz PHS AND 2.4 GHz APPLICATIONS

DESCRIPTION

The µPD5702TU is a silicon laterally diffused (LD) MOSFET IC designed for use as power amplifier 1.9 GHz PHS

and 2.4 GHz applications. This IC consists of two stage amplifiers. The device is packaged in surface mount 8 pin

L2MM (Lead Less Mini Mold) plastic package.

FEATURES

• Output Power

: Pout = +21 dBm MIN. @Pin = −5 dBm, f = 1.9 GHz, VDS = 3.0 V

: Pout = +21 dBm MIN. @Pin = +2 dBm, f = 2.45 GHz, VDS = 3.0 V

• Single Supply voltage

: VDS = 3.0 V TYP.

• Packaged in 8-pin Lead-Less Minimold (2.0 x 2.2 x 0.5mm) suitable for high-density surface mounting.

APPLICATIONS

• 1.9 GHz applications (Example : PHS etc.)

• 2.4 GHz applications (Example : Wireless LAN etc.)

ORDERING INFORMATION (Pb-Free)

Part Number

Package

µPD5702TU-E2-A 8-pin Lead-Less Minimold

Marking

5702

Supplying Form

• 8 mm wide embossed taping

• Pin 5, 6, 7, 8 indicates pull-out direction of tape

• Qty 5 kpcs/reel

Remark To order evaluation samples, contact your nearby sales office.

Part number for sample order: µPD5702TU-A

Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.

Document No. PU10455EJ01V0DS (1st edition)

Date Published November 2003 CP(K)

© NEC Compound Semiconductor Devices 2003

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