VB20200C-E3/4W 데이터 시트보기 (PDF) - Vishay Semiconductors
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VB20200C-E3/4W Datasheet PDF : 5 Pages
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New Product
V20200C, VF20200C, VB20200C & VI20200C
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
TYP.
Breakdown voltage
Instantaneous forward voltage per diode (1)
IR = 1.0 mA
IF = 5 A
IF = 10 A
IF = 5 A
IF = 10 A
Reverse current per diode (2)
VR = 180 V
VR = 200 V
TA = 25 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
TA = 25 °C
TA = 125 °C
VBR
200 (minimum)
0.85
1.21
VF
0.60
0.68
6
3.6
IR
-
5.6
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width ≤ 40 ms
MAX.
-
-
1.60
-
0.76
-
-
150
18
UNIT
V
V
µA
mA
µA
mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
V20200C
VF20200C
Typical thermal resistance per diode
RθJC
2.8
5.0
VB20200C
2.8
VI20200C
2.8
UNIT
°C/W
ORDERING INFORMATION (Example)
PACKAGE
PREFERRED P/N
UNIT WEIGHT (g)
TO-220AB
V20200C-E3/4W
1.88
ITO-220AB
VF20200C-E3/4W
1.75
TO-263AB
VB20200C-E3/4W
1.37
TO-263AB
VB20200C-E3/8W
1.37
TO-262AA
VI20200C-E3/4W
1.45
PACKAGE CODE
4W
4W
4W
8W
4W
BASE QUANTITY
50/tube
50/tube
50/tube
800/reel
50/tube
DELIVERY MODE
Tube
Tube
Tube
Tape and reel
Tube
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
25
Resistive or Inductive Load
20
V20200C
15
VF20200C
10
5
0
0
25 50
75 100 125 150 175
Case Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
9
D = 0.8
8
D = 0.5
D = 0.3
7
D = 0.2
6
D = 0.1
D = 1.0
5
4
3
T
2
1
D = tp/T
tp
0
0
2
4
6
8
10
12
Average Forward Current (A)
Figure 2. Forward Power Loss Characteristics Per Diode
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2
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 89072
Revision: 24-Jun-09
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