BYM63 데이터 시트보기 (PDF) - Philips Electronics
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BYM63 Datasheet PDF : 7 Pages
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Philips Semiconductors
Ripple blocking diode
Product specification
BYM63
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
tfr
forward recovery time
ton
turn-on time
trr
reverse recovery time
Cd
diode capacitance
CONDITIONS
IF = 2 A; Tj = Tj max; see Fig.5
IF = 2 A; see Fig.5
VR = VRRMmax;
see Fig.6
VR = VRRMmax; Tj = 165 °C;
see Fig.6
when switched to IF = 5 A
in 50 ns; see Fig.9
when switched from VF = 0 V to
VF = 3 V; measured between
10% and 90% of IF max;
see Fig.11
when switched from IF = 0.5 A to
IR = 1 A; measured at
IR = 0.25 A; see Fig.11
f = 1 MHz; VR = 0 V; see Fig.7
MIN.
−
−
−
−
−
400
−
−
TYP.
−
−
−
−
−
−
MAX.
1.34
2.30
10
UNIT
V
V
µA
150 µA
1.5 µs
−
ns
−
150 ns
65
−
pF
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE UNIT
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
lead length = 10 mm 25
K/W
note 1
75
K/W
Note
1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer ≥40 µm, see Fig.8.
For more information please refer to the ‘General Part of Handbook SC01.’
1996 Jun 10
3
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