HMX3033HTA 데이터 시트보기 (PDF) - AnaSem Semiconductors

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HMX3033HTA

Low current consumption / 3.0mT High sensitivity CMOS Hall Magnetic Sensor Switch

AnaSem Semiconductors 

Low current consumption, 3.0mT High sensitivity CMOS Hall Magnetic Sensor Switch

Rev. E13-01

HMX3033H Series

ELECTRICAL CHARACTERISTICS

Items

Operating voltage

Current consumption

Detection pulse driving cycle

“H”-level output voltage

“L”-level output voltage

Symbol Min.

VIN

1.6

IAVG

-

Pc

-

VOH VIN-0.4

VOL

-

(Unless otherwise specified, VDD=3.3V, Ta=25°C)

Typ. Max.

Conditions

Unit

3.3

6.0

V

5.0

-

Avg. current at VIN=3.3V

µA

50

90 Pulse width : 1/1000

msec

-

- IOH=-0.5mA

V

-

0.4 IOL=+0.5mA

V

MAGNETIC CHARACTERISTICS

(Unless otherwise specified, VDD=3.3V, Ta=25°C)

Items

Symbol

Min.

Typ.

Max. Unit

MBOPS

1.5*

3.0

5.0

Magnetic flux density at operating point (H→L)

MBOPN

-5.0

-3.0

-1.5*

mT

Magnetic flux density at release point (L→H)

MBRPS

1.2

2.5

4.7*

MBRPN

-4.7*

-2.5

mT

-1.2

Width of hysteresis

MBHYS

0.3*

0.5

1.2*

mT

Note : The values with [*] marks are guaranteed by design, not tested in production.

MAGNETIC-ELECTRIC CONVERSION CHARACTERISTIC

VOUT

VOH

N-pole S-pole

VOL

MBHYS

MBOPN

MBRPN

0

MBHYS

MBRPS MBOPS

Magnetic flux density

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