55N03LTA 데이터 시트보기 (PDF) - Philips Electronics
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55N03LTA Datasheet PDF : 14 Pages
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Philips Semiconductors
PHP55N03LTA series
N-channel enhancement mode field-effect transistor
120
Pder
(%)
80
03aa16
120
I der
(%)
80
03aa24
40
40
0
0
50
100
150
200
Tmb (oC)
Pder
=
-------P----t--o--t-------
P
×
100
%
t o t ( 25 °C )
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
0
0
50
100
150
200
Tmb (oC)
Ider
=
-------I---D--------
I
× 100%
D ( 25 °C )
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
103
ID
(A)
RDSon = VDS / ID
102
tp = 10 µs
100 µs
03ae64
10
P
δ
=
tp
T
tp
t
T
D.C.
1 ms
10 ms
100 ms
1
1
10
102
VDS (V)
Tmb = 25 °C; IDM is single pulse.
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 08642
Product data
Rev. 02 — 2 August 2001
© Koninklijke Philips Electronics N.V. 2001. All rights reserved.
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