BLV21 데이터 시트보기 (PDF) - Philips Electronics

부품명

상세내역

제조사

BLV21

VHF power transistor / N-P-N silicon planar epitaxial transistor

Philips Electronics 

Philips Semiconductors

VHF power transistor

CHARACTERISTICS

Tj = 25 °C

Collector-emitter breakdown voltage

VBE = 0; IC = 5 mA

Collector-emitter breakdown voltage

open base; IC = 25 mA

Emitter-base breakdown voltage

open collector; IE = 2 mA

Collector cut-off current

VBE = 0; VCE = 36 V

Second breakdown energy; L = 25 mH; f = 50 Hz

open base

RBE = 10 Ω

D.C. current gain(1)

IC = 0,7 A; VCE = 5 V

Collector-emitter saturation voltage(1)

IC = 2 A; IB = 0,4 A

Transition frequency at f = 100 MHz(1)

−IE = 0,7 A; VCB = 28 V

−IE = 2 A; VCB = 28 V

Collector capacitance at f = 1 MHz

IE = Ie = 0; VCB = 28 V

Feedback capacitance at f = 1 MHz

IC = 100 mA; VCE = 28 V

Collector-flange capacitance

Note

1. Measured under pulse conditions: tp ≤ 200 µs; δ ≤ 0,02.

Product specification

BLV21

V(BR) CES

V(BR) CEO

V(BR)EBO

ICES

ESBO

ESBR

hFE

VCEsat

fT

fT

Cc

Cre

Ccf

>

65 V

>

36 V

>

4V

<

2 mA

>

2,5 mJ

>

2,5 mJ

typ.

50

10 to 100

typ. 0,65 V

typ. 650 MHz

typ. 625 MHz

typ.

18 pF

typ. 12,8 pF

typ.

2 pF

August 1986

4

Share Link: