IRFR120 데이터 시트보기 (PDF) - Fairchild Semiconductor
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IRFR120 Datasheet PDF : 7 Pages
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Data Sheet
IRFR120, IRFU120
January 2002
8.4A, 100V, 0.270 Ohm, N-Channel
Power MOSFETs
These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
MOSFETs designed, tested, and guaranteed to withstand a
specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
applications such as switching regulators, switching
convertors, motor drivers, relay drivers, and drivers for high
power bipolar switching transistors requiring high speed and
low gate drive power. These types can be operated directly
from integrated circuits.
Formerly developmental type TA09594.
Ordering Information
PART NUMBER
PACKAGE
BRAND
IRFR120
TO-252AA
IFR120
IRFU120
TO-251AA
IFU120
NOTE: When ordering, use the entire part number. Add the suffix T to
obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T.
Packaging
JEDEC TO-251AA
SOURCE
DRAIN
GATE
DRAIN (FLANGE)
Features
• 8.4A, 100V
• rDS(ON) = 0.270Ω
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
Symbol
D
G
S
JEDEC TO-252AA
GATE
DRAIN
(FLANGE)
DRAIN
SOURCE
©2002 Fairchild Semiconductor Corporation
IRFR120, IRFU120 Rev. B
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