VDD501LCTA 데이터 시트보기 (PDF) - AnaSem Semiconductors
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VDD501LCTA
AnaSem Semiconductors
VDD501LCTA Datasheet PDF : 20 Pages
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Low voltage, Low power, ±1% High detect accuracy with delay circuit CMOS Voltage Detector
Rev. E13-01
VDD Series
ELECTRICAL CHARACTERISTICS
Items
Operating voltage
Detection voltage
Hysteresis range
Symbol
Conditions
VIN
VDET
VHYS
VDET = 1.8V ~ 6.0V
VDET = 1.8V ~ 6.0V
Ta = –40°C ~ +85°C
VIN=0.7V
(Ta=25°C unless otherwise specified)
Min.
Typ.
Max.
Unit
Test
circuit
0.7
-
6.0
V
1
VDET
×0.99
VDET
VDET
×1.01
V
1
VDET
×0.02
VDET
×0.05
VDET
×0.08
V
1
0.1
0.4
-
mA
VIN=1.0V
1.0
2.3
-
mA
Output current
N-ch
VIN=2.0V
3.0
VDS=0.5V
VIN=3.0V
5.0
IOUT
VIN=4.0V
6.0
8.2
11.1
12.8
-
mA
3
-
mA
-
mA
VIN=5.0V
7.0
CMOS P-ch
VDS=2.1V
VIN=6.0V
-
CMOS N-ch
VDS=2.1V
VIN=6.0V
1.5
VIN=1.5V
-
13.8
-9.5
9.5
0.6
-
mA
-1.5
mA
4
-
mA 3
2.1
µA
VIN=2.0V
-
0.7
2.5
µA
Current consumption
ISS
VIN=3.0V
-
0.8
2.8
µA
2
VIN=4.0V
-
0.9
3.0
µA
VIN=5.0V
-
1.0
3.4
µA
Leak current
Detection voltage
temperature coefficient
ILEAK VIN=6.0V VOUT=6.0V
∆VDET / VDET = 1.8V ~ 6.0V
∆Ta•VDET Ta = –40°C ~ +85°C
Delay time
VREL→VOUT inversion
TDLY VIN = 0.7V ~ 6.0V
-
10
100
nA
3
-
±20
- ppm/°C 1
10
-
50
ms
50
-
200
ms 5
80
-
400
ms
AnaSem
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