BF245C 데이터 시트보기 (PDF) - NXP Semiconductors.
부품명
상세내역
제조사
BF245C Datasheet PDF : 13 Pages
| |||
NXP Semiconductors
N-channel silicon field-effect transistors
Product specification
BF245A; BF245B; BF245C
DYNAMIC CHARACTERISTICS
Common source; Tamb = 25 C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
Cis
Crs
Cos
gis
gos
yfs
yrs
yos
fgfs
F
input capacitance
reverse transfer capacitance
output capacitance
input conductance
output conductance
forward transfer admittance
reverse transfer admittance
output admittance
cut-off frequency
noise figure
VDS = 20 V; VGS = 1 V; f = 1 MHz
VDS = 20 V; VGS = 1 V; f = 1 MHz
VDS = 20 V; VGS = 1 V; f = 1 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 200 MHz
VDS = 15 V; VGS = 0; f = 1 kHz
VDS = 15 V; VGS = 0; gfs = 0.7 of its
value at 1 kHz
VDS = 15 V; VGS = 0; f = 100 MHz;
RG = 1 k (common source);
input tuned to minimum noise
MIN. TYP. MAX. UNIT
4
pF
1.1
pF
1.6
pF
250
S
40
S
3
6.5 mS
6
mS
1.4
mS
25
S
700
MHz
1.5
dB
handbook−,1h0alfpage
IGSS
(nA)
−1
−10−1
−10−2
−10−3
0
MGE785
typ
50
100 Tj (°C) 150
VDS = 0; VGS = 20 V.
Fig.2 Gate leakage current as a function of
junction temperature; typical values.
6
handbookI,Dhalfpage
(mA)
5
4
3
2
1
0
−4
MGE789
−2
VGS (V)
0
VDS = 15 V; Tj = 25 C.
Fig.3 Transfer characteristics for BF245A;
typical values.
1996 Jul 30
4
Share Link: 