BT169H 데이터 시트보기 (PDF) - NXP Semiconductors.

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BT169H

SCR

NXP Semiconductors. 

BT169H

SCR

20 March 2014

Product data sheet

1. General description

Planar passivated sensitive gate Silicon Controlled Rectifier in a SOT54 (TO-92) plastic

package.

2. Features and benefits

• High voltage capability

• Planar passivated for voltage ruggedness and reliability

• Sensitive gate

3. Applications

• Earth leakage circuit breakers or Ground Fault Circuit Interrupters (GFCI)

• Ignition circuits

• Low power latching circuits

• Protection circuits / shut-down circuits: lighting ballasts

• Protection circuits / shut-down circuits: Switched Mode Power Supplies

4. Quick reference data

Table 1. Quick reference data

Symbol

Parameter

Conditions

VDRM

repetitive peak off-

state voltage

VRRM

repetitive peak reverse

voltage

ITSM

non-repetitive peak on- half sine wave; Tj(init) = 25 °C;

state current

tp = 8.3 ms

half sine wave; Tj(init) = 25 °C;

tp = 10 ms; Fig. 4; Fig. 5

IT(AV)

average on-state

current

half sine wave; Tlead ≤ 83 °C; Fig. 1

IT(RMS)

RMS on-state current half sine wave; Tlead ≤ 83 °C; Fig. 2;

Fig. 3

Static characteristics

IGT

gate trigger current

VD = 12 V; IT = 10 mA; Tj = 25 °C;

Fig. 7

Min Typ Max Unit

-

-

800 V

-

-

800 V

-

-

10

A

-

-

9

A

-

-

0.5 A

-

-

0.8 A

1

50

100 µA

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