G03H1202 데이터 시트보기 (PDF) - Infineon Technologies

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G03H1202

HighSpeed 2-Technology

Infineon Technologies 

IGP03N120H2,

IGW03N120H2

IGB03N120H2

10A

8A

V =15V

GE

12V

6A

10V

8V

6V

4A

2A

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 5. Typical output characteristics

(Tj = 25°C)

12A

10A

8A

T =+150°C

j

T =+25°C

6A

j

4A

2A

0A

3V

5V

7V

9V

VGE, GATE-EMITTER VOLTAGE

Figure 7. Typical transfer characteristics

(VCE = 20V)

10A

9A

8A

7A

V =15V

GE

12V

6A

10V

8V

5A

6V

4A

3A

2A

1A

0A

0V

1V

2V

3V

4V

5V

VCE, COLLECTOR-EMITTER VOLTAGE

Figure 6. Typical output characteristics

(Tj = 150°C)

3V

I =6A

C

I =3A

C

2V

I =1.5A

C

1V

0V

-50°C

0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 8. Typical collector-emitter

saturation voltage as a function of junction

temperature

(VGE = 15V)

Power Semiconductors

5

Rev. 2, Mar-04

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