K2318 데이터 시트보기 (PDF) - SANYO -> Panasonic

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K2318

N-Channel Silicon MOSFET

SANYO -> Panasonic 

2SK2318

Specifications

Absolute Maximum Ratings at Ta = 25˚C

Parameter

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Symbol

VDSS

VGSS

ID

IDP

Allowable Power Dissipation

PD

Channel Temperature

Tch

Storage Temperature

Tstg

Electrical Characteristics at Ta = 25˚C

Conditions

PW≤10µs, duty cycle≤1%

Tc=25°C

Parameter

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source ON-State Resistance

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Turn-ON Delay Time

Rise Time

Turn-OFF Delay Time

Fall Time

Diode Forward Voltage

Symbol

Conditions

V(BR)DSS

IDSS

IGSS

VGS(off)

| yfs |

RDS(on)

RDS(on)

Ciss

Coss

Crss

td(on)

tr

td(off)

tf

VSD

ID=1mA, VGS=0

VDS=16V, VGS=0

VGS=±8V, VDS=0

VDS=10V, ID=1mA

VDS=10V, ID=6A

ID=6A, VGS=4V

ID=2A, VGS=2.5V

VDS=10V, f=1MHz

VDS=10V, f=1MHz

VDS=10V, f=1MHz

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

See specified Test Circuit

IS=8A, VGS=0

Switching Time Test Circuit

Ratings

Unit

20 V

±10 V

12 A

48 A

30 W

1W

150 ˚C

–55 to +150 ˚C

Ratings

Unit

min

typ

max

20

V

100 µA

±10 µA

0.4

1.4 V

10

14

S

30

38 mΩ

40

58 mΩ

1000

pF

750

pF

400

pF

25

ns

135

ns

135

ns

150

ns

1.0

1.2 V

No.5106–2/4

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