12MBI100VN-120-50 데이터 시트보기 (PDF) - Fuji Electric
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12MBI100VN-120-50 Datasheet PDF : 6 Pages
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VGE : 10 V/div
VGE : 10 V/div
0V
0V
IC: 50 A/div
0V
0V
0A
VCE: 100 V/div 0 A
t: 200 ns/div
(a) Turn-on waveform
Fig.3 Switching waveform (mode B)
VCE: 100 V/div
0V
IC: 50 A/div 0 A
t: 200 ns/div
(b) Turn-off waveform
VAK: 100 V/div
IF: 50 A/div
t: 200 ns/div
(c) Reverse recovery waveform
15
VCC= 300 V, VGE= ± 15 V,
Rg= 24 Ω, Tj= 125 °C
10
5
0
0
50
100
150
Current IC, IF (A)
(a) Mode B
15
VCC= 300 V, VGE= ± 15 V,
Rg= 1.6 Ω, Tj= 125 °C
10
5
0
0
50
100
150
Current IC, IF (A)
(b) Mode C
Eon
Eoff
Err
200
250
Eon
Eoff
Err
200
250
Fig.4 Current dependence of switching loss
(c) Path in which the main IGBTs switch and the
RB-IGBTs operate in reverse recovery (Mode C)
For the 3-level inverter operation, basic operation
is in mode B and mode C. Figure 3 shows the turn-on,
turn-off and reverse recovery waveforms in mode B
for a module at VCC = 300 V, IC = 100 A, Rg = 24Ω and
Tj = 125°C.
The switching loss is 3.0 mJ at turn-on, 4.1 mJ at
turn-off, and 1.67 mJ at reverse recovery, and no turn-
off surge that exceeded the rated voltage was found.
Figure 4 shows the current dependence of the
switching loss, and Fig. 5 shows the gate resistance
dependence of the switching loss. As described above,
the reverse-recovery loss characteristics when the RB-
IGBT is in reverse-recovery mode C are no different
from when a conventional FWD is in reverse-recovery
mode B.
25
VCC= 300 V, VGE= ± 15 V,
20 IC, IF= 100 A, Tj= 125 °C
15
10
5
0
1
10
100
Gate resistance Rg (Ω)
(a) Mode B
10
VCC= 300 V, VGE= ± 15 V,
IC, IF= 100 A, Tj= 125 °C
Eon
Eoff
Err
1,000
5
Eoff
Eon
Err
0
0.1
1
10
100
Gate resistance Rg (Ω)
(b) Mode C
Fig.5 Gate resistance dependence of switching loss
U
V
W
P
M
N
Fig.6 Main terminal arrangement
2.3 Package
A conventional compact package (EconoPIM™*2 3 /
*2: EconoPIMTM is a trademark or registered trademark of
Infineon Technologies AG.
52
Vol. 58 No. 2 FUJI ELECTRIC REVIEW
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