2SC1775AETZ 데이터 시트보기 (PDF) - Renesas Electronics

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2SC1775AETZ

Silicon NPN Epitaxial

Renesas Electronics 

2SC1775A

Electrical Characteristics

Item

Symbol Min

Typ

Collector to emitter breakdown V(BR)CEO 120

—

voltage

Collector cutoff current

DC current transfer ratio

ICBO

—

—

hFE1*1

400

—

hFE2

160

—

Base to emitter voltage

VBE

—

—

Collector to emitter saturation VCE(sat)

—

—

voltage

Gain bandwidth product

fT

—

200

Collector output capacitance

Cob

—

1.6

Noise figure

NF

—

—

—

—

Note: 1. The 2SC1775A is grouped by hFE1 as follows.

E

F

400 to 800 600 to 1200

Max

—

0.5

1200

—

0.75

0.5

—

—

5.0

1.5

(Ta = 25°C)

Unit

Test conditions

V IC = 1 mA, RBE = ∞

µA VCB = 100 V, IE = 0

VCE = 12 V, IC = 2 mA

VCE = 12 V, IC = 0.1 mA

V VCE = 12 V, IC = 2 mA

V IC = 10 mA, IB = 1 mA

MHz

pF

dB

dB

VCE = 12 V, IC = 2 mA

VCB = 25 V, IE = 0, f = 1 MHz

VCE = 6 V, IC = 50 µA, f = 10 Hz

Rg = 50 kΩ

f = 1 kHz

Rev.3.00 Mar 03, 2006 page 2 of 5

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