DAC8043(Rev_C) 데이터 시트보기 (PDF) - Analog Devices

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DAC8043
(Rev.:Rev_C)

12-Bit Serial Input Multiplying CMOS D/A Converter

Analog Devices 

DAC8043

WAFER TEST LIMITS @ VDD = +5 V, VREF = +10 V; IOUT = GND = 0 V, TA = +25؇C.

Parameter

Symbol

Conditions

DAC8043GBC

Limit

Units

STATIC ACCURACY

Resolution

Integral Nonlinearity

Differential Nonlinearity

Gain Error

Power Supply Rejection Ratio

Output Leakage Current (IOUT)

N

INL

DNL

GFSE

PSRR

ILKG

Using Internal Feedback Resistor

∆VDD = ± 5%

Digital Inputs = VIL

12

±1

±1

±2

± 0.002

±5

Bits min

LSB max

LSB max

LSB max

%/% max

nA max

REFERENCE INPUT

Input Resistance

RIN

7/15

kΩ min/max

DIGITAL INPUTS

Digital Input HIGH

Digital Input LOW

Input Leakage Current

VIH

VIL

IIL

VIN = 0 V to VDD

2.4

V min

0.8

V max

±1

µA max

POWER SUPPLY

Supply Current

IDD

Digital Inputs = VIN or VIL

500

Digital Inputs = 0 V or VDD

100

µA max

µA max

NOTE

Electrical tests are performed at wafer probe to the limits shown. Due to variations in assembly methods and normal yield loss, yield after packaging is not guaranteed

for standard product dice. Consult factory to negotiate specifications based on dice lot qualifications through sample lot assembly and testing.

DICE CHARACTERISTICS

1. VREF

2. RFB

3. IOUT

4. GND

5. LD

6. SRI

7. CLK

8. VDD

Substate (die backside) is internally connected to VDD.

DIE SIZE 0.116 × 0.109 inch, 12,644 sq. mils (2.95 × 2.77 mm, 8.17 sq. mm)

CAUTION

ESD (electrostatic discharge) sensitive device. Electrostatic charges as high as 4000 V readily

accumulate on the human body and test equipment and can discharge without detection.

Although the DAC8043 features proprietary ESD protection circuitry, permanent damage may

occur on devices subjected to high energy electrostatic discharges. Therefore, proper ESD

precautions are recommended to avoid performance degradation or loss of functionality.

WARNING!

ESD SENSITIVE DEVICE

–4–

REV. C

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