BLW86 데이터 시트보기 (PDF) - Philips Electronics
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BLW86 Datasheet PDF : 15 Pages
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Philips Semiconductors
HF/VHF power transistor
Product specification
BLW86
handbook−,2h0alfpage
d3, d5
(dB)
d3
−30
−40 d5
Th =
90 °C
70 °C
50 °C
25 °C
MGP643
−50
0
25
P.E.P. (W)
50
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; typical values.
Fig.17 Intermodulation distortion as a function of
output power.(1)
50
handbook, halfpage
ηdt
Gp
(%)
40
ηdt
30
MGP644
20
Gp
(dB)
15
10
20
5
10
0
0
25
50
75
P.E.P. (W)
VCE = 28 V; IC(ZS) = 50 mA; f1 = 28,000 MHz;
f2 = 28,001 MHz; Th = 25 °C; typical values.
Fig.18 Double-tone efficiency and power gain as a
function of output power.
30
handbook, halfpage
Gp
(dB)
20
MGP645
10
0
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;
Th = 25 °C; ZL = 6,4 Ω.
Fig.19 Power gain as a function of frequency.
20
handbook, halfpage
ri, xi
(Ω)
10
0
MGP646
ri
xi
−10
1
10
f (MHz)
102
VCE = 28 V; IC(ZS) = 50 mA; PL = 47,5 W;
Th = 25 °C; ZL = 6,4 Ω.
Fig.20 Input impedance (series components) as a
function of frequency.
August 1986
Figs 19 and 20 are typical curves and hold for an
unneutralized amplifier in s.s.b. class-AB operation.
11
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